Acquainted with MRAM
With MRAM, the computer turned on does not need to be awaited. In an instant, your computer will turn on lights like a calculator. Since MRAM has the speed of SRAM, Non-Volatile, without solid, and has a density in the DRAM.
Try to count, how many types of memory in your computer? At a minimum, there are three different types of memory in a PC. The first course is how you feel its presence is a hard disk. The second is the last RAM, rarely felt its presence, let alone by the cloud community, that is cache memory. Without all three of your computers will be very hard work.
Hard drive allows you to store all the data is done by computer. Without hard drive will be very difficult to store data. Then beguna RAM for temporary data storage. Existing capacity in the RAM was going to help the application including the operating system can run. While the last mentioned, have characteristics similar to RAM. That is, store data related to the work processor. All three work together to make your computer work.
Why should or three? why not one? Sure the computer not only be simpler, but also will be easier and cheaper. The answer is that none of them can give you what your computer needs fully. Memory that is faster, cheaper, and can store without electricity.
SRAM is used as cache memory is very expensive production cost, the most expensive of the three. However, also the fastest memory. Unfortunately, this memory needs electricity to simply store data. RAM is now using DRAM technology. Much cheaper than SRAM, but not as fast as the speed of SRAM. Characteristics that require electricity to store data can not make RAM for storing data. Therefore, RAM only as a bridge between the hard disk with the data cache memory.
Your computer is not always going to use three types of memory. Because now found a new type of memory that has all the characteristics of the three memory had no weaknesses. It acts almost as fast as RAM with affordable price and does not require electricity to store data. This memory is called Magneto resistive Random Access Memory, or MRAM abbreviated.
With MRAM, the computer turned on does not need to be awaited. In an instant, your computer will turn on lights like a calculator. Since MRAM has the speed of SRAM, Non-Volatile, without solid, and has a density in the DRAM.
Try to count, how many types of memory in your computer? At a minimum, there are three different types of memory in a PC. The first course is how you feel its presence is a hard disk. The second is the last RAM, rarely felt its presence, let alone by the cloud community, that is cache memory. Without all three of your computers will be very hard work.
Hard drive allows you to store all the data is done by computer. Without hard drive will be very difficult to store data. Then beguna RAM for temporary data storage. Existing capacity in the RAM was going to help the application including the operating system can run. While the last mentioned, have characteristics similar to RAM. That is, store data related to the work processor. All three work together to make your computer work.
Why should or three? why not one? Sure the computer not only be simpler, but also will be easier and cheaper. The answer is that none of them can give you what your computer needs fully. Memory that is faster, cheaper, and can store without electricity.
SRAM is used as cache memory is very expensive production cost, the most expensive of the three. However, also the fastest memory. Unfortunately, this memory needs electricity to simply store data. RAM is now using DRAM technology. Much cheaper than SRAM, but not as fast as the speed of SRAM. Characteristics that require electricity to store data can not make RAM for storing data. Therefore, RAM only as a bridge between the hard disk with the data cache memory.
Your computer is not always going to use three types of memory. Because now found a new type of memory that has all the characteristics of the three memory had no weaknesses. It acts almost as fast as RAM with affordable price and does not require electricity to store data. This memory is called Magneto resistive Random Access Memory, or MRAM abbreviated.
Some time ago, Reescale, a semiconductor company in Arizona, the United States announced that it has able to make a 4 MB MRAM for 90 nm with a machine.It is still very small compared to DRAM or flash disk. However, this remains a very good progress. Freescale is not the only company that develops MRAM technology.There's Samsung, Honeywell, NEC, Toshiba, Sony, and others. Even IBM has managed to develop MRAM for 16 MB to 180 nm engine.
One of the missions carried by this MRAM is shorten the booting process and is always ready to take the computer when turned on. You do not need anymore waiting for the computer to load the operating system from disk into RAM. Within seconds the computer will be ready for use. Just as you turn on your phone or a calculator.
Classified as solid MRAM memory because there is no single mechanical components like hard drives. MRAM is already started to be developed since 30 years ago. Since then MRAM has several developments that make it faster and higher density. The following description outlines how an MRAM is made and how it works.
MRAM cell is composed of several magnetic. Each cell is composed of two ferromagnetic metal layers separated by insulating layers. One of the layers contain a fixed magnetic field (bottom layer). Meanwhile, the other one will vary according to the stored information. On the top layer is composed electrical path parallel to the cell. And under the lower ferromagnetic layer is the electrical current path lined 90-degree angle with the linta san. So that if viewed these lines will form like a mosquito net.
If the reading process in progress, then there is only one path only to be used. Electrical path that is above the layer of cells. If a layer indicating a high resistance to the flow, then reads the information is "1". Conversely, if low-resistance layer, meaning stored information is "0". The second big difference in the resistance of these conditions is 23s.
Both differences can be determined by the condition of the current value of the exit. To make the process of reading an electric current will run on one track and read the resistance megetahui cel for existing information within the cell. And to make writing a transistor is not active so the current will be through two paths at once. Writing occurs because the current flow across the memory cell to change the polarity of one of the ferromagnetic layer.
One of the missions carried by this MRAM is shorten the booting process and is always ready to take the computer when turned on. You do not need anymore waiting for the computer to load the operating system from disk into RAM. Within seconds the computer will be ready for use. Just as you turn on your phone or a calculator.
Classified as solid MRAM memory because there is no single mechanical components like hard drives. MRAM is already started to be developed since 30 years ago. Since then MRAM has several developments that make it faster and higher density. The following description outlines how an MRAM is made and how it works.
MRAM cell is composed of several magnetic. Each cell is composed of two ferromagnetic metal layers separated by insulating layers. One of the layers contain a fixed magnetic field (bottom layer). Meanwhile, the other one will vary according to the stored information. On the top layer is composed electrical path parallel to the cell. And under the lower ferromagnetic layer is the electrical current path lined 90-degree angle with the linta san. So that if viewed these lines will form like a mosquito net.
If the reading process in progress, then there is only one path only to be used. Electrical path that is above the layer of cells. If a layer indicating a high resistance to the flow, then reads the information is "1". Conversely, if low-resistance layer, meaning stored information is "0". The second big difference in the resistance of these conditions is 23s.
Both differences can be determined by the condition of the current value of the exit. To make the process of reading an electric current will run on one track and read the resistance megetahui cel for existing information within the cell. And to make writing a transistor is not active so the current will be through two paths at once. Writing occurs because the current flow across the memory cell to change the polarity of one of the ferromagnetic layer.
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